Experimental Investigation of the N-Pbs/P-Si Heterojunction Band Lineup with I-V and C-V Measurements

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Experimental Investigation of the N-Pbs/P-Si Heterojunction Band Lineup with I-V and C-V Measurements

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dc.contributor.author Ismail, Raid A. [رائد عبدالوهاب إِسماعيل] en_US
dc.date.accessioned 2009-11-25T15:31:58Z
dc.date.available 2009-11-25T15:31:58Z
dc.date.issued 2005 en_US
dc.identifier.citation Qatar University Science Journal, 2005, Vol. 25, Pages 40-45. en_US
dc.identifier.uri http://hdl.handle.net/10576/10272
dc.description.abstract In this paper we present experimental investigation of band lineup of near ideal PbS/Si heterojunction diode using I-V and C-V measurements. The C-V measurements show that the fabricated diodes were abrupt type, and the built-in potential Vui wds determined from C-2-V plot. The band offsets of A,Ec: 0.15 eV and A,Ev:0.55 eV were calculated at 300 K for conduction and valence bands, respectively. The energy band diagram of n-PbS/p-Si heterojunction was constructed. I-V measurements of different temperatures near 300K were employed to frnd the potential barrier to electron transport process across the junction. en_US
dc.language.iso en en_US
dc.publisher Qatar University en_US
dc.subject Physics en_US
dc.subject الفيزياء ar
dc.title Experimental Investigation of the N-Pbs/P-Si Heterojunction Band Lineup with I-V and C-V Measurements en_US
dc.title.alternative بناء المخطط الطاقي للمفرق الهجيني ................ ar
dc.type Article en_US
dc.identifier.pagination 40-45 en_US
dc.identifier.volume 25 en_US

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