Experimental Investigation of the N-Pbs/P-Si Heterojunction Band Lineup with I-V and C-V Measurements

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Author Ismail, Raid A. [رائد عبدالوهاب إِسماعيل] en_US
Available date 2009-11-25T15:31:58Z en_US
Publication Date 2005 en_US
Citation Qatar University Science Journal, 2005, Vol. 25, Pages 40-45. en_US
URI http://hdl.handle.net/10576/10272 en_US
Abstract In this paper we present experimental investigation of band lineup of near ideal PbS/Si heterojunction diode using I-V and C-V measurements. The C-V measurements show that the fabricated diodes were abrupt type, and the built-in potential Vui wds determined from C-2-V plot. The band offsets of A,Ec: 0.15 eV and A,Ev:0.55 eV were calculated at 300 K for conduction and valence bands, respectively. The energy band diagram of n-PbS/p-Si heterojunction was constructed. I-V measurements of different temperatures near 300K were employed to frnd the potential barrier to electron transport process across the junction. en_US
Language en en_US
Publisher Qatar University en_US
Subject Physics en_US
Subject الفيزياء ar
Title Experimental Investigation of the N-Pbs/P-Si Heterojunction Band Lineup with I-V and C-V Measurements en_US
Alternative Title بناء المخطط الطاقي للمفرق الهجيني ................ ar
Type Article en_US
Pagination 40-45 en_US
Volume Number 25 en_US


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