p-cds/n-Si Anisotype Heterojunction solar cells wih Efficiency of 6.4%

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p-cds/n-Si Anisotype Heterojunction solar cells wih Efficiency of 6.4%

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Title: p-cds/n-Si Anisotype Heterojunction solar cells wih Efficiency of 6.4%
Author: Ismail, Raid A. [رائد عبدالوهاب إِسماعيل]; Al Samarai, Abdul Majeed E. [عبد المجيد عيادة السامرائي]; Sultan, Omar A. A. [عمر عبد الستار عبد الرزاق سلطان]
Abstract: In the present paper, p-CdS/n-Si heterojunction solar cells are prepared for the first time by the spray pyrolysis technique. Using such low-cost method, cells with 6.4'/o AM1 conversion efficiency ina O.ZZ fill factor have been made. The forward current of the prepared cells is dominated by the tunneling-recombination mechanism. Spectral response measurements revealed that these cells exhibit a wide spectral response (400-1150 nm) with two distinct peaks, the first at l.:550nm, while the second at ).:800nm. Photo-induced open-circuit voltage decay technique illustrated that the minority carriers lifetime of these cells is around 20ps
URI: http://hdl.handle.net/10576/10322
Date: 2005

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