Effects of electric and magnetic fields on the energy levels of a hydrogenic impurity in GaAs/Gal-xAl x As heterjunction
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Variational method within the effective — mass approximation is used to calculate the shallow impurities states in GaAs / Gai_xAl^As heteroj unctions. Modified Fang-Howard wavefunction is used as the trial wavefunction. Magnetic and electric fields effects on the impurity binding energy for the infinite and finite barrier heteroj unctions are presented.