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المؤلفYapabandara, Kosala
المؤلفMirkhani, Vahid
المؤلفSultan, Muhammad Shehzad
المؤلفOzden, Burcu
المؤلفKhanal, Min P.
المؤلفParka, Minseo
تاريخ الإتاحة2020-10-01T11:39:53Z
تاريخ النشر2017
اسم المنشورJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
المصدرScopus
معرّف المصادر الموحدhttp://dx.doi.org/10.1116/1.4979321
معرّف المصادر الموحدhttp://hdl.handle.net/10576/16355
الملخصIn this paper, the authors report the device instability of solution based ZnO thin film transistors by studying the time-evolution of electrical characteristics during electrical stressing and subsequent relaxation. A systematic comparison between ambient and vacuum conditions was carried out to investigate the effect of adsorption of oxygen and water molecules, which leads to the creation of defects in the channel layer. The observed subthreshold swing and change in field effect mobility under gate bias stressing have supported the fact that oxygen and moisture directly affect the threshold voltage shift. The authors have presented the comprehensive analysis of device relaxation under both ambient and vacuum conditions to further confirm the defect creation and charge trapping/detrapping process since it has not been reported before. It was hypothesized that chemisorbed molecules form acceptorlike traps and can diffuse into the ZnO thin film through the void on the grain boundary, being relocated even near the semiconductor/dielectric interface. The stretched exponential and power law model fitting reinforce the conclusion of defect creation by oxygen and moisture adsorption on the active layer
اللغةen
الناشرAmerican Institute of Physics Inc.
الموضوعbottom-gate ZnO
sol-gel
العنوانStudy of device instability of bottom-gate ZnO transistors with sol-gel derived channel layers
النوعArticle
رقم العدد3
رقم المجلد35
dc.accessType Abstract Only


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