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AuthorThomas, Deepu
AuthorAugustine, Simon
AuthorSadasivuni, Kishor Kumar
AuthorPonnamma, Deepalekshmi
AuthorAlhaddad, Ahmad Yaser
AuthorCabibihan, John-John
AuthorVijayalakshmi, K.A.
Available date2021-07-05T10:58:28Z
Publication Date2016
Publication NameJournal of Electronic Materials
ResourceScopus
URIhttp://dx.doi.org/10.1007/s11664-016-4673-4
URIhttp://hdl.handle.net/10576/21056
AbstractAl-doped polycrystalline nano ZnO (Al-ZnO) thin films with different doping concentrations were successfully prepared by the microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The structural analysis along with the orientation of the prepared films was examined by powder x-ray diffraction (PXRD) patterns. The deposited film is polycrystalline and the (002) orientation enhanced upon doping. Additional investigations were carried out to study the effect of electron beam irradiation (e-irradiation) on the band gap and photoconductivity of both irradiated and unirradiated samples. Both the Al doping and e-irradiation led to the enhancement of the photoconductivity of prepared materials. This property enables us to tune the properties of materials for various applications by controlling dopant concentrations and e-irradiation. The dependence of photocurrent on e-irradiation of Al-ZnO thin films was not reported previously. Therefore, Al-doped polycrystalline nano-ZnO thin film is a promising material for band gap engineering and for the development of solar cells.
Languageen
PublisherSpringer New York LLC
Subjectband gap
doping
mSILAR
photoconductivity
solar cell
TitleMicrotron Irradiation Induced Tuning of Band Gap and Photoresponse of Al-ZnO Thin Films Synthesized by mSILAR
TypeArticle
Pagination4847-4853
Issue Number10
Volume Number45
dc.accessType Abstract Only


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