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    Time-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers

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    Date
    2016
    Author
    Ozden, Burcu
    Khanal, Min P
    Mirkhani, Vahid
    Yapabandara, Kosala
    Yang, Chungman
    Ko, Sangjong
    Youn, Suhyeon
    Hamilton, Michael C
    Sk, Mobbassar Hassan
    Ahyi, Ayayi Claude
    Park, Minseo
    ...show more authors ...show less authors
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    Abstract
    Time-resolved photocurrent (TRPC) spectroscopy with a variable-wavelength sub-bandgap light excitation was used to study the dynamics of the decaying photocurrent generated in the heterostructures of the AlGaN/GaN high electron mobility transistors (HEMTs) layers. In AlGaN/GaN HEMTs, reliability of the device is degraded due to the prevalence of current collapse. It is recognized that electrically active deep level defects at the surface/interfaces and the bulk in the HEMTs layers can contribute to the unwanted current collapse effect. Therefore, it is of great importance to analyze the deep level defects if the reliability of the HEMTs device is to be improved. In this research, TRPC spectroscopy was used to elucidate the origin and nature of the deep level defects by analyzing the time evolution of the photocurrent decay excited at different wavelengths of light. The two devices that show similar characteristics for wavelength-dependency on photocurrent generation were chosen, and TRPC spectroscopy was conducted on these devices. Although the two samples show similar characteristics for the wavelength-dependency on photocurrent generation, they exhibited dissimilar time-dependent photocurrent decay dynamics. This implies that TRPC spectroscopy can be used to distinguish the traps which have different origins but have the same de-trapping energy.
    DOI/handle
    http://dx.doi.org/10.1166/jnn.2016.12590
    http://hdl.handle.net/10576/22408
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