تصفح Center for Advanced Materials Research حسب المؤلف "Uprety S."
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Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures
Wang S.; Mirkhani V.; Yapabandara K.; Cheng R.; Hernandez G.; Khanal M.P.; Sultan M.S.; Uprety S.; Shen L.; Zou S.; Xu P.; Ellis C.D.; Sellers J.A.; Hamilton M.C.; Niu G.; Sk M.H.; Park M.... more authors ... less authors ( American Institute of Physics Inc. , 2018 , Article)We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical ... -
Enhancement of electrical characteristics of a-ZTO TFTs based on channel layers produced with alternating precursor concentration
Uprety S.; Hanggi D.; Yapabandara K.; Mirkhani V.; Khanal M.P.; Schoenek B.; Dhar S.; Park M.; Hamilton M.; Wang S.; Hames W.E.; Sk M.H.... more authors ... less authors ( Institution of Engineering and Technology , 2018 , Article)The enhancement in electrical characteristics of the thin film transistors (TFTs) based on the mixed-stacked amorphous zinc tin oxide (a-ZTO) with an alternating precursor concentration is reported. The channel layers were ...