Dielectric properties of Mn doped Bismuth Barium Titanate based ceramic thin films prepared by PLD technique
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In this article, the effect of Mn doping on the permittivity and dielectric loss in 0.67BiFeO3-0.33BaTiO3 (BF-BT) based film bulk acoustic resonator test structures has been investigated. BF-BT thin films were deposited on the fused silica substrates with Pt/TiO2/Ti as bottom electrode. During the study of the BF-BT based parallel-plate structures, it has been revealed that BF-BT is in the ferroelectric state at room temperature. Higher permittivity (ԑ) is observed at a growth temperature of 600 °C and lower dielectric loss is achieved at 0.3 wt% Mn doping contents. These results show that the proposed BF-BT based FBAR test structure has a great potential for applications in tunable thin Film Bulk Acoustic Resonator (FBAR) devices. Comparison of the measured and simulation results has been made by utilizing the Mason equivalent circuit.