Dielectric properties of Mn doped Bismuth Barium Titanate based ceramic thin films prepared by PLD technique
| Author | Mallick, Shoaib |
| Author | Vorobiev, Andrei |
| Author | Ahmad, Zubair |
| Author | Touati, Farid |
| Author | Gevorgian, Spartak |
| Available date | 2020-12-02T07:03:52Z |
| Publication Date | 2017 |
| Publication Name | Ceramics International |
| Resource | Scopus |
| ISSN | 2728842 |
| Abstract | In this article, the effect of Mn doping on the permittivity and dielectric loss in 0.67BiFeO3-0.33BaTiO3 (BF-BT) based film bulk acoustic resonator test structures has been investigated. BF-BT thin films were deposited on the fused silica substrates with Pt/TiO2/Ti as bottom electrode. During the study of the BF-BT based parallel-plate structures, it has been revealed that BF-BT is in the ferroelectric state at room temperature. Higher permittivity (ԑ) is observed at a growth temperature of 600 °C and lower dielectric loss is achieved at 0.3 wt% Mn doping contents. These results show that the proposed BF-BT based FBAR test structure has a great potential for applications in tunable thin Film Bulk Acoustic Resonator (FBAR) devices. Comparison of the measured and simulation results has been made by utilizing the Mason equivalent circuit. |
| Sponsor | This work was made possible by GSRA3-1-1116-14016 from the Qatar National Research Fund (a member of Qatar Foundation). The findings made herein are solely the responsibility of the authors. |
| Language | en |
| Publisher | Elsevier Ltd |
| Subject | Bismuth Barium Titanate Dielectric properties Mn doped BF-BT thin films PLD technique Tunable FBAR |
| Type | Article |
| Pagination | 8778-8783 |
| Issue Number | 12 |
| Volume Number | 43 |
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