Telecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature
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We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectral-linewidth-narrowing, excitation-length.
- Materials Science & Technology [285 items ]