Telecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature
Date
2018-01-01Author
Ho, V. X.Al Tahtamouni, T. M.
Wang, Y.
Jiang, H. X.
Lin, J. Y.
Zavada, J. M.
Vinh, N. Q.
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We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectral-linewidth-narrowing, excitation-length.
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