Telecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature
التاريخ
2018-01-01المؤلف
Ho, V. X.Al Tahtamouni, T. M.
Wang, Y.
Jiang, H. X.
Lin, J. Y.
Zavada, J. M.
Vinh, N. Q.
...show more authors ...show less authors
البيانات الوصفية
عرض كامل للتسجيلةالملخص
We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectral-linewidth-narrowing, excitation-length.
معرّف المصادر الموحد
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85059482485&origin=inwardالمجموعات
- علم وتكنولوجيا المواد [294 items ]